1- In the first place in order to find the main difference between the point subthreshold slope and (SSp) average subthreshold slope (SSavg) please read the below paper. This paper completely described this subject in one paragraph by 2D numerical simulations.
http://ieeexplore.ieee.org/document/6482880/
2- It is worth mentioning that the role of both of the slope and maxslope is completely related to the subthreshold slope formula and comprehensively described in the below links:
3-As you mentioned, the extracted values of the Silvaco TCAD are based on V/decade unit, but in order to use the extrapolated values in your upcoming papers, you should just multiply this value to 1000. Afterward, you have a nanoscale semiconductor devices with 166 mV/decade SSavg. As we know that the SS is one the important metrics of short channel effect which help to reduce the ultimate power supply (Vdd) of the nanoscale transistor.
Hello Dear Meshkin, Mr. Rouzbeh Molaei Imen Abadi is suggesting in right direction. In Silvaco examples, point SS extraction method( or code) is given. We have also preferred the same.
Dear, you should also see average subthreshold slope for your work. I am busy, weekend of this week, I will try to provide you some information. Can you please tell me your mail id?
I read the ieee paper that you linked above, I saw the formula for average subthreshold swing but I couldn,t find the main difference between the subthreshold swing and subthreshold slope, are you mean the "Electrical characteristics of DMG-NTFET" paragraph?