How to get butterfly curve for read static noise margins, write static noise margins and hold static noise margin?
Dear Sandeep:
As you know, the Static Noise Margin (SNM) is the most important parameter for memory design. SNM, which affects both read and write margin, is related to the threshold voltages of the NMOS and PMOS devices of the SRAM cell.
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In order to find and calculate the SNM of the cell, you can measure the side lengths (not diagonal lengths!) of both of these squares, and the smaller of the two lengths is the SNM of the SRAM cell.
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Write margin is the measure of the ability to write data into the SRAM cell. Write margin voltage is the maximum noise voltage present at bit lines during successful write operation. When noise voltages exceeds the write margin voltage, then write failure occur.
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I think that, you can benefit from this valuable article about your topic at:
http://venividiwiki.ee.virginia.edu/mediawiki/index.php/ToolsSimulationMemoryStaticNoiseMargin.
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Also this valuable Link:
https://www.semanticscholar.org/paper/Dynamic-Noise-Margin-Analysis-of-a-Low-Voltage-8T-Upadhyay-Kar/98b27348f6ee5e50ce2d9af5ab6de09936460c5f#paper-header.
I hope it will be helpful...
With my best regards...
In addition to the previous explain, you can get a butterfly curve SRAM as the following steps:
Go to "Virtuoso Analog Design Environment" -> Results -> Direct Plot -> Main Form and on the "Plotting Mode" you choose "Append" and plot the value you want.
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You can also depend on this link:
https://www.researchgate.net/post/How_to_plot_butterfly_curve_in_mentor_graphic_software.
Best regards....
I Second the process recommended by Dr. Hassan Nasser. Though I recommend the following for better understanding:
1. 10.1016/j.aeue.2020.153516
2. 10.1007/s11277-021-08462-8
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