In particular, I am interested in having the implantation resulted profiles of the concentrations of target atoms interstitials, implanted ions in interstitial and lattice site positions, and vacancies. SRIM description is very bad in this respect. It is not clear, for example, whether one has to sum the vacancy profiles in the file "vacancy.txt" with knock-on profile to get total vacancy concentrations, or the latter is already included in the former. What does the file "range.txt" contains - affected target atoms or interstitial ones?
Hi Andrey,
The total number of atomic displacements is calculated by vacancy and replacement collisions as follows:
Displacements=Vacancies + Replacement collisions
The total numbers of vacancies are calculated using SRIM simulations and according to following:
Vacancies=interstitials + atoms exited from Si
The Si recoil atoms calculated from SRIM simulations are the sum of replacement collisions and interstitials, thus the number of interstitials can be calculated as follows:
Interstitials= Si recoils – replacement collisions
We have done vacancies/interstitiala calculation in one of our work, you can find more details here:
Data Supporting Information_Weaving Nanostructures with Ion Induc...
Hope it helps!
Thank you very much! Hope this will help. I will return to SRIM issue a little bit later after I finish current works. May I adress to you directly if I have further questions about SRIM?
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