No ionization integrals possible at this bias point. Possibly applied voltage is less than DELTAV in field line calculation or the electrode does not contact any semiconductor material.
Dear Sathosh,
welcome! In order to answer your question one has to view your structure and its biasing. If your applied voltage is less than the breakdown voltage, the ionization integrals will be zero. So, f you want to simulate the device for breakdown you have to bias it near the breakdown. The other warning message concerns the contact of he metal electrode to the semiconductor layers.
My advice is to simulate first the device and nominal operating conditions and then at the extreme ones.
BEST WISHES
Thanks for responding to my question Dr. Abdelhalim Zekry. I would like to share my structure here sir. Please let me know the mistakes that I am doing :
#InGaN p-n junction
go atlas
# MESH SPECIFICATION PART
MESH AUTO
#x-dimension
x.mesh loc=0.0 spac=0.01
x.mesh loc=1.0 spac=0.01
#y-dimension. Defining 50nm top and bottom thicknesses for electrodes. 0 nm to 400 nm is the InGaN material.
y.mesh loc=-0.050 spac=0.004
y.mesh loc=0.0 spac=0.004
y.mesh loc=0.160 spac=0.002
y.mesh loc=0.240 spac=0.002
y.mesh loc=0.400 spac=0.004
y.mesh loc=0.450 spac=0.004
#DEFINING REGION
REGION num=1 MATERIAL=InGaN x.min=0.0 x.max=1.0 y.min=0 y.max=0.200 x.COMP=0.08
REGION num=2 MATERIAL=InGaN x.min=0.0 x.max=1.0 y.min=0.200 y.max=0.400 x.COMP=0.08
#Defining electrode
electr num=1 name=anode x.min=0 x.max=1.0 y.min=-0.050 y.max=0.0
electr num=2 name=cathode x.min=0 x.max=1.0 y.min=0.400 y.max=0.450
#DEFINING DOPING
DOPING REGION=1 P.TYPE CONC=2e18 UNIFORM
DOPING REGION=2 N.TYPE CONC=4e18 UNIFORM
#SAVING THE MESH
save outf=InGaNp-njunc4new.str
tonyplot InGaNp-njunc4new.str
#MODELS
MODELS ANALYTIC OPTR
#LOW FIELD MOBILITY OF InGaN SPECIFICATION IN REGIONS 1 AND 2
MOBILITY MATERIAL=InGaN MU1N.CAUG=53 MU2N.CAUG=1008 MU1P.CAUG=3 MU2P.CAUG=183.6 BETAN.CAUG=0 GAMMAN.CAUG=0 DELTAN.CAUG=1 BETAP.CAUG=0 ALPHAP.CAUG=0 DELTAP.CAUG=2 NCRITN.CAUG=8.24E17 NCRITP.CAUG=3E17
#Ohmic contact
contact num=1 name=anode NEUTRAL
contact num=2 name=cathode NEUTRAL
#SPECIFY THE InGaN MATERIAL PARAMETERS
MATERIAL MATERIAL=InGaN REGION=1 EG300=3.07 AFFINITY=4.331 COPT=7.5E-10
MATERIAL MATERIAL=InGaN REGION=2 EG300=3.07 AFFINITY=4.331 COPT=7.5E-10
# OUTPUT THE REQUIRED PARAMETERS
OUTPUT TAURN TAURP CON.BAND VAL.BAND BAND.PARAM BAND.TEMP CHARGE DEVDEG EFIELD E.LINES E.MOBILITY FLOWLINES H.MOBILITY HCTE.JOULE HEI HHI IMPACT INT.CHARGE J.CONDUC J.ELECTRON J.HOLE J.TOTAL J.DRIFT J.DIFFUSION POLAR.CHARGE QFN QFP QTUNN.BBT QTUNN.EL QTUNN.HO RECOMB TOT.DOPING TRAPS TRAPS.FT U.AUGER U.BBT U.RADIATIVE U.SRH U.TRANTRAP PERMITTIVITY
#SOLUTION PART and Initial solution part
solve init
method GUMMEL NEWTON
save outf=InGaNp-njunc5new.str
tonyplot InGaNp-njunc5new.str
#Stepping the anode voltage and saving the data
log outfile=diodeex02.log
solve vanode=-7.0 vstep=0.05 vfinal=7 name=anode
tonyplot diodeex02.log
quit
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