My CVD grown Garphene intrinsically shows p-type behavior as indicated by transfer curves obtained. I am not sure what exactly is causing its p-type doping. I remove PMMA by using dichloromethane, acetone, HCl and water separately. To remove photoresist, I use dimethyleformanide. I am not sure what is causing its p-type doping.
Are there ways to neutralize graphene?
May be it is just stress-induced vacancies, not the contamination. You may try high temperature or substrate oxidation for mechanical annealing.
It produce weak oxide layer allowing graphene to delaminate and anneal. Usually done with copper substrates.
Dear Muhammad,
welcome,
The intrinsic doping may be due to the effect of the substrate on the graphine layer where it introduces empty lower energy levels for the electron transfer from graphene to substrate rendering it p-type.
By doping graphine you can change its conduction type and carrier concentration. Please the details on doping process please follow the link:http://www.nanoctr.cn/gongjianru/keyanchengguo/201107/W020130421771151382368.pdf
Bet wishes
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