Dear All,
I want to use the Lebail Fit to calculate the crystal size of my sample. My sample was epitaxially grew on single oriented Si. Hundreds of nm. Both the sample and the substrate are well oriented. I am wondering how to align the peaks by using the theoretical substrate peak to avoid the errors.
Just manually calculate or can do it in GSAS?
Thanks!!
Have you done GIXRD or powder XRD? if it is GIXRD what is the angle of incidence? because for 100 nm you have to use very small incident angle about 0.01 deg. If it is powder XRD then you can separate the substrate and sample peaks from the standard data. Then you can easily do what ever analysis you want to do.
If the expected size is "hundreds of nm", then XRD might not be the best choice for this measurement of "crystal size", assuming you are proposing to do this based on the XRD peak breadth. Changes in peak breath (caused by small crystallite size) is only really useful for sizes below 100 nm.
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