It is a general practice to introduce Ground Plane in FDSOI devices under the BoX. The Ground Planes are introduced by Ion Implantation through Top Si layer and Buried Oxide. I wanted to know that by doing this implantation, don't they harm the crystalanity of the Top Si layer in which the FDSOI MOSFET will be formed ? Since in FDSOI, they prefer very Low doped or even undoped Si channel, so by doing Ground Plane implantation, don't they affect the intrinsic/undoped/low-doped nature of top Si layer.
Dear Chandan Kumar Jaiswal ,
Now every thing is very clear and I can answer your question.
Yes you can produce the p+ GP layer by Boron ion implantation.
All what you consider is that you must adjust the range of the implantation to be below the BOX by about three times the deviation of the ion implantation range.
In this way the top silicon layer will not be doped.
After the implantation you need to make rapid thermal annealing only to heal the damage by the ion implantation.
Please report the results of this proposal please.
Best wishes
Dear Chandan Kumar Jaiswal ,
welcome!
I am interested in your question. But If you make a drawing of the structure and mark the layer to be produced by ion implantation, I will answer your question.
Best wishes
Abdelhalim abdelnaby Zekry , Thank you for showing your interest in my problem. I have added the schematic here. I want to introduce p+ (1e18 /cm3) GP in my device. The thickness of BOX is 10 nm and p- silicon Channel is 5 nm. I need to introduce the GP just beneath the BOX oxide while mainting the very low doing in my channel (low doped or intrinsic channel is an essential part of an FDSOI MOSFET). In Literature they mention that after STI, they do ion implantation to make GP but when I try to do it, I am not able to maintin the low doing of p- channel and it is being doped by the tail of Ion Implantation distribution.
Dear Chandan Kumar Jaiswal ,
Now every thing is very clear and I can answer your question.
Yes you can produce the p+ GP layer by Boron ion implantation.
All what you consider is that you must adjust the range of the implantation to be below the BOX by about three times the deviation of the ion implantation range.
In this way the top silicon layer will not be doped.
After the implantation you need to make rapid thermal annealing only to heal the damage by the ion implantation.
Please report the results of this proposal please.
Best wishes
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