In silicon we use to dope pentavalent or trivalent impurities to make n type or p type semiconductor respectively. In case of CIGS and CZTS its structure itself makes it P type or N type. I think it is due to lattice mismatch or defect in crystal structure if so can any one elaborate, if not what is the reason? Can any one give me some literature (reference) or paper to get some idea about it?
Besides, it would be good to know the correlation between Nano structure (local spatial crystallographic orientation & defect morphology/distribution) & device performance/yield. CIGS and CZTS are of tremendous commercial & scientific interest. Copper zinc tin sulfide (CZTS), CIGS (copper indium gallium selenide): http://en.wikipedia.org/wiki/CZTS
The observed p-type conductivity comes mainly from the CuZn antisite with a relatively deeper acceptor level compared to the Cu vacancy in ternary chalcopyrites. For more details, you can refer to the attached paper. The book "Semiconductor Materials for Solar Photovoltaic Cells" also gives some details on page 32.
http://www.springer.com/us/book/9783319203300
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