I am undergraduate student. I've produced Graphene Oxide using Modified hummer's method. In SEM/EDS results it shows some quantity of silicon in final product... ?where does it come from!
It may be a usual EDS artifact - silicon internal fluorescence peak by Si layer of detector.
I agree with both Peter and Vladimir. In order to understand more please also tell us about how the sample was prepared and what conditions you used for SEM/EDS analysis
Here I've attached two files..
I've given two attempts, GO-I was according to Modified Hummer's Method and the
GO-II was prepared by using the two different acids together.. (8:2)
Vinod, thank you for posting the images. It shows your EDS analysis is meaningless.
The error on the Si is larger than the values - 121% !! You can throw this away! The data shows a lot of problems. Firstly you have no counts - no data. Your count rate is very low, 60cps, this should be much higher, thousands or 10s of thousands. EDS is a statistical method, you need lots of counts to get good peak shapes and low error, so in your case you have the opposite. The probe current seems to be very high. The accelerating voltage is very high if you are trying to analyse GO. If this is a thin film then your beam will be punching straight through to the substrate. (what is your substrate?) It is worrying that the Deadtime is at 0%, this should be between 20-50%. You have used standardless software - This will not work for light elements. You will have to go down the route of measuring standards in order to get numbers from carbon and oxygen. Oxygen can be calculated by stoichiometry if the elements (Z
Peter and Ian J, thanks to both of you for such guidance. After considering all this i'll give another attempt and will be back with other questions..
Here I am attaching a SEM images produced GO! what do say about that?
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