Zinc Interstitial forms a defect near conduction band of ZnO and generally oxygen vacancy forms a deep level defect. So its it possible that generation of Zinc interstitial enhances the electrical conductivity in ZnO films?
When irradiated/ heated, the non stoichiometric ZnO undergoes following reaction:
ZnO----Zn^2+1/2O2+2e
The excess Zn^2 thus formed get trapped into the vacant interstitial sites and two electrons are present at two neighbouring interstitial sites to maintain the electrical neutrality. These loosely electrons move readily when the current is applied to make ZnO an electrical conductor