Dear Raju,
It is so that this material is modeled as conducting grains. The conductivity inside the grains is appreciable. However, the grain boundaries forms narrow potential barriers impeding the motion of the free charges..
So. for the free charge carriers to move along the material, they have to cross this potential barriers. The potential barriers at the grain boundary can be tunneled by a process called hoping or by thermionic emission. Normally the barriers are thin enough such that the tunneling dominated the process.
So, the resistivity has a negative temperature coefficient because of the hopping activation by the increased temperature.
For much more information on this topic please refer to CHAPTER 2
MATERIAL ASPECTS OF PEDOT: PSS.
wish you success
Is it possible to remove the layer of PEDOT:PSS from a Silicon surface.(please note sample is N2 annealed)?
Abdelhalim Zekry sir can you suggest a method?
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