Don't forget that you are using high-k in your gate, you should add models with the aim to be relevant. Actually, in current microelectronic devices, tunneling has become a very important physical effect. In some devices, tunneling leads to undesired leakage currents, mainly for for gates in advanced MOSFETs. You must check the corresponding models in Sentaurus Device

Dear Shivalal,

    Plot the Id-Vg curve in svisual. The leakage current is the amount of Id at Vgs=0 V. You can see it by doing the Id axis in log scale, as per Soroush Faramehr's answer.

Any problem contact me for clarification.

Regards

Don't forget that you are using high-k in your gate, you should add models with the aim to be relevant. Actually, in current microelectronic devices, tunneling has become a very important physical effect. In some devices, tunneling leads to undesired leakage currents, mainly for for gates in advanced MOSFETs. You must check the corresponding models in Sentaurus Device