Actually, Sentaurus TCAD has different types of traps defined as eNeutral/Acceptor, pNeutral/Donor, and FixedCharge only. But there is no such provision as Pb0 and Pb1 centre trap which are practically two types of interface traps in [100] Si surface having an orientation of the unpaired electron in [111] direction and [211] direction respectively. In a few research papers I have seen them mentioning including distinctively Pb0 and Pb1 centre. So I want to know how to specify them in TCAD ?
Dear Anupal Deka ,
welcome!
I will give a conceptual answer on your question.
The traps are electronic states lying in the energy gap. These electronic sates are ocuppied with electrons or holes according to the position of the Fermi level in the material. According to their position in the energy gap they interact with either the conduction band , the valence band or the two bands.
The most effective states are those lying near the middle of the energy gap where they interact equally well with electrons and holes and therefore act as recombination centers. A recombination center is characterized by its energy gap Et , the density of the recombination centers Nt and their capture cross section.
It is the capture cross section that is dependent on the initial charge on the defect.
I would like that you follow the topic of the recombination and recombination mechanisms in the book:
Book Electronic devices with physical insight
Best wishes
Dear Abdelhalim abdelnaby Zekry Sir,
Thanks for your time and explanation on the insights of trap interaction physics. I will try to go through the book. However, I was looking for a TCAD simulation related query and its solution.
Hello Anupal Deka ,
i think should now how Pb0 and Pb1 are reacting in silicon , as accecptor or donnor , or the both ? => if you dont now , you specify in TCAD the worst case i.e. => acceptor and donor
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