I am trying to differentiate Sn2+ from Sn4+ in my SnO2 thin films and hopefully quantify the amounts as well. The thin film material can contain both Sn2+ and Sn4+ oxidation states.
It is possible to do this using XPS, but I am looking for a second method to check agreement.
We have access to XRD, RBS, PL, Raman, FTIR, , UV-Vis-IR, Ellipsometer, UPS, ISS (Ion Scattering Spectroscopy), REELS. Is it possible to leverage these characterization tools to identify Sn2+ and Sn4+?
Thank you very much
Dear Helen,
UPS will help, there are some literature out there regarding the valance band differences arising from difference in oxidation states.
XPS is a bit of challenging if you dont have access to adjustable, intense photon source. The peak separation is too close.
XRD could be in theory due to stress steming from lattice disruption, however if the amount is less, very challenging though, requires Rietveld analysis.
I hope that helps, good luck, let me know If yoy need literature papers ?
regards
engin
XPS or Auger is your best route. Be aware that other techniques measure different properties and it would be unusual if you did get (close) agreement.
As for both Oxides the 3d levels are overlapping due to relaxation effects, you can use the Augerparameter (Combination of XPS corelevel bindig energy and Auger Kinetik energy) to separate the oxides. Reference data can be found in the NIST data base.
Hi Helen,
I guess the best technique in your case is the EELS, it allows you to check the valency and olso the intensity of each components of Sn : Sn+3 and Sn+4. Or as the others already suggessted, the XPS technique.
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