If a n-type semiconductor material SnO2 has a carrier concentration of 1E19 cm-3 (mainly due to oxygen vacancies), is it possible that doping it with an element with the same 4+ charge can reduce the carrier concentration to 1E12-1E13 cm-3 levels?
You can find the answer in the attached file:
Yang, J., Yang, Z., Meng, T., Han, Y., Wang, X. and Zhang, Q., 2016. Effects of silicon doping on the performance of tin oxide thin film transistors. physica status solidi (a), 213(4), pp.1010-1015.
1- By definition, upon adding dopants the material can NOT be called intrinsic.
2- As the oxidation state of the dopant is similar to that of the host cation, it is not expected to get a change in the number of charge carriers.
However, the difference between the radiuses of Ge and Sn may alter the mobility of the charge carriers.
3- The type of the precursor of the doping material may affect the number of the oxygen vacancies.
This is an amazingly useful paper Dr Azeez Barzinjy
I just revisited this paper and notice that the XPS technique was used to quantify the amount of oxygen vacancies in the O-1s region. Do you have any insights into how sound this approach is, considering that an oxygen vacancy has no oxygen to emit XPS signals
Thank you everybody for the delightful wisdom in this discussion
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