I am simulating a Perovskite solar cell to optimize it for best possible efficiency. I want to see losses in each layer of the perovskite solar cell, absorber, HTL and ETL and TCO . Does anybody have an idea on how should I approach to this problem?
Dear Animesh Vaish ,
If the perovskite material acts as an i-layer, then most of the losses will be caused by this i-layer. It is so that in this case the cell can be modeled as a PIN diode.
According to the one diode model of the solar cell then the i-layer will be responsible for the forward bias diode loss= Vd id with Vd is the diode voltage and Id is the diode dark current.
There is also losses due to the series resistance, which is mostly also in the perovskite layer. The losses in the HTL and in the ETLdue to their resistances is very small for good working solar cells.
It remains to locate the losses in the photocurrent Iph. The losses in the photo current is mostly in the i-layer and its interfaces with transport layers.
Also, the losses in the open circuit voltage due to the miss matches at the band edges between the HTL and the ETL.
It may be losses found due to the bad ohmic contacts at of the metallic
electrodes to the transport layers.
These are the losses counted in the solar cell.
You can look at my analytic solution for such cells to get out the source of losses:
Conference Paper Generic Analytical Models for Organic and Perovskite Solar Cells
Best wishes
Dear Animesh,
To study the loss in PSC you must firstly vary the concentration of defects inside the bulk and at the interface. You could then calculate the losses of the current and therefore of the conversion efficiency.
Good luck.
Dear Animesh Vaish ,
If the perovskite material acts as an i-layer, then most of the losses will be caused by this i-layer. It is so that in this case the cell can be modeled as a PIN diode.
According to the one diode model of the solar cell then the i-layer will be responsible for the forward bias diode loss= Vd id with Vd is the diode voltage and Id is the diode dark current.
There is also losses due to the series resistance, which is mostly also in the perovskite layer. The losses in the HTL and in the ETLdue to their resistances is very small for good working solar cells.
It remains to locate the losses in the photocurrent Iph. The losses in the photo current is mostly in the i-layer and its interfaces with transport layers.
Also, the losses in the open circuit voltage due to the miss matches at the band edges between the HTL and the ETL.
It may be losses found due to the bad ohmic contacts at of the metallic
electrodes to the transport layers.
These are the losses counted in the solar cell.
You can look at my analytic solution for such cells to get out the source of losses:
Conference Paper Generic Analytical Models for Organic and Perovskite Solar Cells
Best wishes
Thank you Abdelhalim abdelnaby Zekry , Idris Bouchama for your important suggestions
I am simulating perovskite silicon tandem solar cells using TCAD Sentaurus. I am facing a problem in modelling the tunnel junction for my tandem cell. Can any one please suggest some tips to solve my problem.
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