I am trying to simulate a tunnel junction with two highly doped nitride materials. When I am using 2A0 grid size , I am getting 2500A/cm2 current density at 2V but if I increase the grid to just 3A0 the current density drops to 900A/cm2 current density at 2V. How can a 1A0 grid size difference make such a big impact? Any advise on this will be highly appreciated. Thank you

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