In case of semiconductor oxide film deposited at 350 degree Celsius i found small bubbles/black holes/ black particles on the film. I am struggling with that bubbles to make a very uniform film. i am using a stabiliser in 2ME solvent to make ZnO film , in this case no bubbles. But if i want to make AlOx or ZrOx i find that problem. Can you suggest?

I tried by reducing the flow rate but i need a thick layer. I repeat the process 6 or times. As no. of layer increases the density of bubbles/black particle increasing.

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