I have the acetic acid-based sol-gel solution of PZT and want to deposit a thich film on Si in a single-step dip-coating. But how can I overcome the cracking of the film in this thickness range?
I think cracking will result due to the large lattice mismatch between Si and PZT. Maybe you have to prepare a buffer layer with increasing lattice constants towards PZT. Sometimes gradient mixtures of Ca --> BaF2 layer are used. This paper reports such layer to deposit PbSe onto Si (Lattice mismatch ~20%).