For the dispersion of Bi nanowires, AAO and Cu ( seed layer) have to dissolved. 6M HNO3 is used to dissolved Cu. HNO3 is strong oxidizing agent and very quickly dissolves Cu but unfortunately Bi also dissolved.
Can anybody suggest me how to chemically etch Cu without dissolution of Bi?
You can try using Ferric Chloride in room temperature to etch Cu (standard method used by graphene people). It might be selective to Bi, as chlorine and Bi typically reacts at a higher temperature.
If you are simply dispersing the nanowires, you really don't have to etch away the seed layer as they are probably very thin, so that you can just sonicate the sample to disperse the nanowires. However, if you want to obtain only a pure nanowire solution, I would suggest you to simply float the AAO (with seed layer facing downwards) on the etching solution for few minutes until no visible seed layer is left.
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