I would like to develop HSQ after e-beam exposure. Can anyone tell me the exact procedure to do it? I checked the website of the company and all that they mention is 0.26 N TetraMethylAmmoniumHyrdoxide (TMAH) for development but do not tell the time for development and the procedure to wash it later.
I use TMAH containing developer, called MF CD-26, and I heat it up to 60 C.
I used TMAH 25% to develop 30s at romm temperature for 30 nm dots, the TMAH 25% is very dangerous, you should be careful.
You can find information here plus there are many publications. This is not a complete list. Success.
Electron-Beam Lithography with Hydrogen Silsesquioxane (HSQ)
(1) H. Namatsu, Y. Takahashi, K. Yamazali, T.Yamaguchi, M. Nagase, “Three-dimensional siloxane resist for the formation of nano-patterns with minimum linewideth fluctuations, ” J. Vac. Sci. Technol., B 16 (1998) 69-76.
(2) H. Namatsu, F. Yamaguchi, M. Nagase, K.Yamazali, K. Kurihara, “Nanopatterning of a hydrogen silsesquioxane resist with reduced linewidth fluctuations,” Microelectron. Eng. 41/42 (1998) 331-334.
(3) B. E. Maile, W. Henscheld, H. Kurz, B. Rienks, R. Polman, P. Kaars, “Sub-10 nm linewidth and overlay performance achieved with a fine-tuned EBPG-5000 TFE electron-beam lithography system,” Jpn. J. Appl. Phys. 39 (2000) 6836.
(4) F. C. M. J. M. van Delft, J. P, Weterings, A. K. van Langen-Suurling, H. Romijn, “Hydrogen silsesquioxane/novolak bilayer resist for high aspect ratio nanoscale electron-beam lithography” J. Vac. Sci. Technol., B 18 (2000) 3419.
(5) M. Peuker, M. H. Lim, H. I. Smith, R. Morton, A. K. van Langen-Suurling, J. Romijn, E. W. J. M. van der Drift, F. C. M. J. M. van Delft, “Hydrogen silsesquioxane, a high resolution negative tone electron-beam resist, investigated for its applicability in photon-based lithographies,” Microelectron. Eng. 61/62 (2002) 803-809.
(6) L. Mallard, C. Cunge, S. Tedesco, B. Dalzotto, J. Foucher, “HSQ hybrid lithography for 20 nm CMOS device development,” Microelectron. Eng. 61/62 (2002) 755-761.
(7) D. P. Mancini, K. A. Gehoski, E. Ainley, K. J. Nordquist, D. J. Resnick, T. C. Bailey, S. V. Sreenivasan, J. G. Ekerdt, C. G. Willson, “Hydrogen silsesquioxane for direct electron-beam patterning of step and flash imprint lithography templates,” J. Vac. Sci. Technol., B 20 (6) (2002) 2896-2901.
(8) F. C. M. M. van Delft, “Delay-time and aging effects on contrast and sensitivity of hydrogen silsesquioxane,” J. Vac. Sci. Technol., B 20 (2002) 2932-2936.
(9) St. Trellenkamp, J. Moers, A. van der Hart, P. Kordos, H. Luth, “Patterning of 25 nm-wide silicon webs with an aspect ratio of 13,” Microelectron. Eng. 67/68 (2003) 376-380.
(10) W. Henschel, Y. M. Georgiev, H. Kurz, “Study of a high contrast process for hydrogen silsesquioxane as a negative tone e-beam resist,” J. Vac. Sci. Technol., B 21 (2003) 2018-2025.
(11) W. Henschel, T. Wahlbrink, Y. M. Georgiev, M. Lemme, T. Mollenhauer, B. Vratzov, A. Fuchs, H. Kurz, “Fabrication of 12 nm electrically variable shallow junction metal-oxide-semiconductor field effect transistors on silicon on insulator substrates,“ J. Vac. Sci. Technol., B 21 (6) (2003) 2975-2979.
(12) J. Kretz, L. Dreeskornfeld, J. Hartwich, W. Rosner, “20 nm electron beam lithography and reactive ion etching for the fabrication of double gate FinFET devices,” Microelectron. Eng. 67/68 (2003) 763-768.
(13) M. J. Word, I. Adesia, P. R. Berger, “Nanometer-period gratings in hydrogen silsesquioxane fabricated by electron beam lithography,” J. Vac. Sci. Technol., B 21 (6) (2003) L12-L15
(14) D. Lauvernier, J. Vilcot, M. Francois, D. Decoster, “Optimization of HSQ resist e-beam processing technique on GaAs material,” Microelectron. Eng. 75 (2) (2004) 177-182.
(15) Y. M. Georgiev, W. Henschel, A. Fuchs, H. Kurz, “Surface roughness of hydrogen silsesquioxane as a negative tone electron beam resist,“ Vacuum 77(2) (2004) 117-123.
(16) A. Jamieson, C. G. Willson, Y. Hsu, and A. D. Brodie, “Low-Voltage electron beam lithography resist processes: top surface imaging and hydrogen silisesquioxane bilayer, J. Micrlith., Microfab., Microsyst., Vol. 3 No. 3., July (2004) 442-449.
(17) G. Larrieu, E. Dubois, “Reactive ion etching of a 20 nanometers tungsten gate using a SF6/N2 chemistry and hydrogen silsesquioxane hard mask resist,” J. Vac. Sci. Technol., B 23 (5) (2005) 2046-2050.
(18) I. Baek, J. Yang, W. Cho, C. Ahn, K. Im, S. Lee, “Electron beam lithography patterning of sub-10 nm line using hydrogen silsesquioxane for nanoscale device applications, J. Vac. Sci. Technol., B 23 (6) (2005) 3120-3123.
(19) W. Weber, G. Ilicali, J. Kretz, L. Deeskornfeld, W. Roesner, W. Hansch, L. Risch, “Electron beam lithography for nanometer-scale planar double-gate transistors,“ Microelectron. Eng. 78/79 (2005) 206-211.
(20) D. Lauvernier, S. Garidel, C. Legrand, J. Vilcot, “Realization of sub-micron patterns on GaAs using HSQ etching mask,” Microelectron. Eng. 77(3-4) (2005) 210-216.
(21) J. Kretz, L. Deeskornfeld, G. Ilicali, T. Lutz, W. Weber, “Comparative study of calixarene and HSQ resist systems for the fabrication of sub-20 nm MOSET device demonstrators,“ Microelectron. Eng. 78/79 (2005) 479-483.
(22) F. Fruleux-Cornu, J. Penaud, E. Dubois, M. Francois, M. Muller, “An Optimal High Contrast e-beam Lithography Process for the Patterning of Dense Fin Networks” Materials Science and Engineering C 26 (2006) 893-897.
(23) N. Clark, A. Vanderslice, R. Grove III, R. R. Krchnavek, “Time-dependent exposure dose of hydrogen silsesquioxane when used as a negative electron-beam resist,” J. Vac. Sci. Technol., B 24 (6) (2006) 3073-3076.
(24) E. J. Boyd, R. J. Blaikie, “Three dimensional HSQ structures formed using multiple low energy electron beam lithography,” Microelectron. Eng. 83 (4-9) (2006) 767-770.
(25) F. Fruleux-Cornu, J. Penaud, E. Dubois, M. Francois, M. Muller, “Optimization of HSQ e-beam lithography for the patterning of FinFET transistors” Microelectron. Eng. 83 (4-9) (2006) 776-779.
(26) H. Yang, A. Jin, Q. Luo, C. Gu, Z. Cui, Y. Chen, “Low-energy electron-beam lithography of hydrogen silsesquioxane,” Microelectron. Eng. 83 (4-9) (2006) 788-791.
(27) Y. Chen, H. Yang, Z. Cui, “Effects of developing conditions on the contrast and sensitivity of hydrogen silsesquioxane,” Microelectron. Eng. 83 (4-9) (2006) 1119-1123.
(28) Y. Matsubara, J. Taniguchi, I. Miyamoto, “Fabrication of three-dimensional hydrogen silsesquioxane resist structures using electron beam lithography,” Jap. J. Appl. Physics, Part 1, 45(6B) (2006), 5538-5541.
(29) A. E. Grigorescu, M. C. van der Krogt, C. W. Hagen, “Limiting factors for electron beam lithography when using ultra-thin hydrogen silsesquioxane layers,” J. Micro/Nanolithography, MEMS, and MOEMS, 6(4), (2007) 1-7.
(30) A. E. Grigorescu, M. C. van der Krogt, C. W. Hagen, P. Kruit, “Influence of the development process on ultimate resolution electron beam lithography, using ultrathin hydrogen silsesquioxane resist layers,“ J. Vac. Sci. Technol. B Volume 25, Issue 6 (2007) 1998-2003..
(31) A. E. Grigorescu, M. C. van der Krogt, C. W. Hagen, P. Kruit, “10 nm lines and spaces written in HSQ, using electron beam lithography,“ Microelectron. Eng. 84(5-8) (2007) 822-824.
(32) M. Haffner, A. Haug, A. Heeren, M. Fleischer, “Influence of temperature on HSQ electron-beam lithography,“ J. Vac. Sci. Technol. B Volume 25, Issue 6 (2007) 2045-2048.
(33) S. Choi, N. Jin, V. Kumar, I. Adesida, M. Shannon, “Effects of developer temperature on electron-beam hydrogen silsesquioxane resist for ultradense silicon nanowire fabrication,” J. Vac. Sci. Technol. B Volume 25, Issue 6 (2007) 2085-2088.
(34) T. Lutz, M. Specht, L. Risch, C. Friederich, L. Dreeskornfeld, J. Kretz, W. Weber, W. Roesner, “Fabrication of a nano-scale NAND memory array based on a SONOS Fin-FET cell using e-beam lithography and hydrogen-silsesquioxane resist,” Microelectron. Eng., 84(5-8), (2007) 1578-1580.
(35) C. M. Hessel, M. A. Summers, A. Meldrum, M. Malac, J. G. C. Veinot, “Direct Patterning, Conformal Coating, and Erbium Doping of Luminescent nc-Si/SiO2 Thin Films from Solution Processable Hydrogen Silsesquioxane,” Adv. Mater. 19, (2007) 3513-3516.
(36) V. Sidorkin, E. van der Drift, H. Salemink, “Influence of hydrogen silsesquioxane resist exposure temperature on ultrahigh resolution electron beam lithography,” J. Vac. Sci. Technol. B Volume 26, Issue 6 (2008) 1071-1023.
(37) S. Choi, M. J. Word, V. Kumar, I. Adesida, “Comparative study of thermally cured and electron-beam-exposed hydrogen silsesquioxane resists,” J. Vac. Sci. Technol. B Volume 26, Issue 5 (2008) 1654-1659.
http://www.dowcorning.com/content/publishedlit/XR-1541_E-Beam_resist.pdf
It is not a big problem/ You can use different solutions for development:
1) TMAH 25% - standart solution with good resolution
2) 1%NaOH+4%NaCl - ultra high resolution, but you should use high doses in EBL!
3) KOH - widely used developer of lots of photoresists and e-beam resists.
I can recommend to begin with 1 min for development, and 4 minutes for development with NaOH.
For rinse use flowing di water for 1-2 minutes and dry with nitrogen.
Do you need some samples images of EBL with XR-1541?
this may be Helpful too: http://nanolithography.gatech.edu/HSQ1.htm
Also can you tell me where you purchased the 0.25 TMAH !?
http://nanolithography.gatech.edu/HSQ1.htm
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