I would like to know if it is possible to determine the sign of carriers and concentration (from 1/C2 vs Bias dependency) for such system. It is crucial to deposit the film on a metallic substrate? I know there a lot of factors which can affect the results in this case. Furthermore, how the measurements will be affected if instead of using electrochemistry, I am inserting my film between two metallic electrodes and perform C V characteristics?
Hi, Petru
I valued the carrier concentration (NA) of charge on the surface of the electrodes measured by differential capacitance at the interface electrode / electrolyte through curves Mott-Schottky Plot (MSP) in H2SO4 0.5 M and presented NA values between 2.7E20 and 3.8E19 boron atoms.cm-3 for the frequencies 1 to 10 kHz.. Were used as electrodes Boron Doped Diamond films on n-type silicon substrates (BDD/Si). I had no problem.!
Hello Petru,
Possibly, it is ok to consider your semiconductor/semiconductor system as a semiconductor/metal system if el. conductivity of highly doped nSi is close to that of a metal. A metal electrode instead of electrolyte is worth checking out. It should be taken into account that most metals are chemically reactive and can form an interfacial layer. Gold is nice but it may have good diffusion property. Maybe Ga... It depends on your semiconductor properties.
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