How can I apply voltage to graphene which is deposited on copper?

03 March 2016 0 5K Report

I have a question about the biasing method of graphene which is deposited on the copper. In previous researches, graphene has been deposited on Sio2 substrate and they used single-capacitance formula (u_c=h*v_f*[ pi*a_0*| V_bias-V_dirac | ]^0.5) for calculating the relation between graphene chemical potential and applied voltage.

If we deposit graphene on copper(copper as a substrate instead of SiO2), which formula must we use to calculate the relation between graphene chemical potential and applied voltage? Also, how is the biasing circuit configuration?

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