I want to measure the mobility of NiO semiconductors with the Hall effect but I don't know which contact is appropriately working. NiO thin film was grown from the RF-sputtering method.
Actually, I read some topics and I found out Ti and Ni are the best for this. But, I'm considering how to connect Ti and Ni with my sample. If I use indium solder, I am afraid this way can destruct the sample at high temperatures. Or if I use evaporation deposition (sputtering, thermal) for the contact point, I'm afraid it can turn to NiTiO3 or something like this.
Please help me and explain in as much detail as possible.
Thank you so much for that
The condition for electrode material selection is such that the resulting heterojunction formed is Ohmic in nature. Since NiO is P-type semiconductor, for it to make ohmic contact only those metals should be used for electrode which have work function greater than NiO.
To measure the Hall effect correctly, you should 1. deposit NiO film on a dielectric substrate, 2. deposit metallic contacts of the same square, 3. measure the current-voltage characteristics. If the I-V curve is linear, you got good contacts and can measure the Hall effect in dark. If the contacts show nonlinear I-V curve or are sensitive to a light, results maybe wrong.
To measure the mobility of NiO semiconductors using the Hall effect, it is common to use Ti or Ni as contact materials as they have good electrical conductivity and are relatively stable when in contact with NiO. However, the choice of contact material will also depend on the specific requirements of your experiment and the properties of the NiO sample. Low-temperature bonding techniques such as ultrasonic bonding, or using a thin layer of a conducting polymer as a buffer layer between the NiO and the Ti or Ni contact, can help to avoid any reaction between the contact and the semiconductor. Additionally, using e-beam evaporation or magnetron sputtering at low temperatures can be used to deposit the contact material on the sample, minimizing any reactions between the contact and the semiconductor. It's always good to check the compatibility of the contact materials with your sample
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