Let's say optimal temperature is set at 600 degree Celsius. Is the wafer transferred onto the manipulator holder and heated from RT to 600, or the manipulator has been ramped up to 600 and kept steady before the wafer is loaded on to the manipulator?
Temperature is ramped up after substrate being loaded onto manipulator.
Dear Danmin Chen,
During the transfer of the wafer to the deposition region you have to avoid any contamination to the wafer. I think the wafer will be subjected to less contamination when you transfer it into the called state. Then you can gradually heat it up to desorb the absorbed gas atoms or molecules. For epitaxial growth you have to avoid the contaminations. I do not know what is the material of your wafers. But if they are silicon the rapid heating of the wafer do not affect much the crystallographic defects in it. I think it is the possibility of contaminating the wafer is the controlling factor of the process flow.
When you heat up under vacuum it will help release all absorbed contaminants on the surface.
You can try the two methods and see the difference.
Best wishes
https://books.google.iq/books?id=OPZ5YGXpdC0C&pg=PA5&lpg=PA5&dq=For+MBE+operation+wafer+transfer+before+or+after+heating+via+manipulator?&source=bl&ots=W_NSGGSiBQ&sig=ACfU3U0CgN2fnokMEYq8-yza6fE7UNeOSA&hl=en&sa=X&ved=2ahUKEwjmnpuW6M_2AhX-SfEDHXvaAvYQ6AF6BAgQEAI,kindly check this link.
https://books.google.iq/books?id=xajrCAAAQBAJ&pg=PA87&lpg=PA87&dq=For+MBE+operation+wafer+transfer+before+or+after+heating+via+manipulator?&source=bl&ots=8DUbirMBDY&sig=ACfU3U2ojaDbdsPGdFbFFo0Nbk4YIVFy_A&hl=en&sa=X&ved=2ahUKEwjmnpuW6M_2AhX-SfEDHXvaAvYQ6AF6BAgGEAI,this link may be useful.
https://patents.google.com/patent/US4605469A/en,u can follow this link.
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