Looking for information/input on AlGaAs laser PL:
1. for commercial AlxGa1-xAs EEL QW lasers (X=0.1~0.4), how does the laser excitation wavelength (~405, ~450, 488, 514, 520, 532, 660 nm) and power affect PL intensity and peak position? trying to get an appropriate excitation laser source to maximize the PL intensity for dark line defect (DLD) detection.
2. How to minimize the PL background from N-GaAs substrate? will short wavelength excitation laser source help? Filter appears to be not work well.
3. Usually the DLD is formed within active zone (P-cladding/QW/N-cladding), how can we effectively identify in which layer the DLD is located in PL?
4. Any recommended laser source with high power (>100mW) + large (>0.5mm) and uniform (collimated, ideally flat head) beam profile? (need to cover large sample size).
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