There is a brief and interesting question/answer on the oxidation of amorphous silicon here on Research Gate:

https://www.researchgate.net/post/What_is_the_oxidation_rate_of_amorphous_silicon#571154533d7f4b286e047a7e 

In relation to this discussion I am wondering about the doping dependence:

In crystalline silicon the oxidation rate actually depends also on the doping type and concentration. Both, boron doping (from concentrations >1e20cm-3) and phosphorus doping (from concentrations >1e19cm-3) increases the oxidation rate compared to non-doped or only moderately-doped silicon.

Has the effect of doping on the oxidation rate actually also been looked at for amorphous silicon?

• Do the oxidation rates or limiting oxide thicknesses of a-Si:H (hydrogenated amorphous silicon) depend on the doping concentration or dopant type?
• Does phosphorus or boron incorporation in non-hydrogenated amorphous silicon (e.g. from sputtering) also depend on doping?[...possibly despite the fact that the conductivity type may not be really affected by phosphorus or boron incorporation in non-hydrogenated silicon?] 

Thank you very much in advance if you care to share your knowledge.