If the CVD process is performed at atmospheric pressure, does that mean there are as many air molecules (CO2, N2O, etc) present in the chamber as there are outside of the chamber? Or is the atmospheric pressure created by first evacuating the chamber then re-pressurizing by flowing in precursors?
Also, for LPCVD, is the finite pressure due to the precursors or air molecules? Hope this question makes sense. Thank you.
Dear Seohong,
Atmospheric pressure CVD is the process that happens at atmospheric pressure i.e., 1 atm or 1.01 bar or 760 Torr. It doesn't mean the process will occur in the air (which contains 78% N2, 21% O2, and 1 % of CO2, Ar, and Moisture content). Any pure gas (e.g., Ar, N2, H2, or Methane) or mixture gas (e.g. Ar + H2, Ar + CO2) can be used for the particular process.
Hope you understand.
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