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Questions related from Seohong Park
I understand that LPCVD process is surface-reaction limited due to the high diffusivity of the gas, but why does this help with depositing more uniform film?
20 November 2022 3,681 1 View
I need to etch deep through the substrate, but the etch selectivity is not that high. How can I deposit a very thick layer of Ni using electroplating? I am thinking at least 20 um. Is there a...
09 March 2022 9,616 0 View
I understand that inductively coupled plasma (ICP) means inductively coupled plasma, which has coils around the dielectric wall, and reactive ion etching (RIE) uses combination of chemical and...
04 February 2022 3,055 3 View
The charge profile of an AlGaN/GaN HEMT is usually modelled with six sheet charges as shown in the figure, polarization charge pair of AlGaN and GaN, and ionized surface donor states and 2DEG....
21 November 2021 5,559 2 View
Hi, I would like to gain more insights on HEMT figures of merit (cutoff frequency f_T, maximum oscillation frequency f_max, breakdown voltage BV, on-resistance R_on, maximum drain current I_dmax)...
17 October 2021 8,066 1 View
I know that the maximum open circuit voltage of a perovskite solar cell increases with a deeper HOMO level of a hole transport layer, but what happens when it is too deep?
08 July 2020 9,958 2 View
Do you dope the perovskite material the same way you dope silicon? Is there a P-type perovskite and N-type perovskite inside the cell?
26 March 2020 2,658 6 View
For example, I see HEMT structures such as AlGaN Barrier / GaN Channel / GaN Buffer. What is the role of a buffer layer? Is it primarily used for heat conduction (heat sink)?
01 January 1970 8,129 1 View
