I'm studying on graphene growth on Ni/SO2/Si thin film using CVD method. We are covering nickel thin film on SiO2 substrate using sputtered method. After covering, we've seen some dust particles on nickel surface and If we growth graphene, we have a some problem with graphene surface. We are using nitrogen gun in order to remove dust but we've failed. we also tried to acetone and alcohol but we didn't get rid of those particles. Does anyone know how to clean nickel thin film surface?
I've never work with nickel surfaces but in our field when we work with SiO2 substrates, in order to remove dust particles, we submerge the wafers in a water+dishwasher solution and sonicate. Then we follow a washing procedure consisting on water --> acetone --> isopropanol.
Let us know what works for you :-)
Best,
Daniel
Dear Dr. Sibel Kasap
My greeting for you
Try to use diluted chlorid acid
Dear Dr. Sibel,
Have you checked if there is any contamination? Because, there might be contamination on your SiO2 surface or in Ni film, if you didn't clean the SiO2 surface properly before Ni deposition or during the Ni deposition due to the chamber contamination ( remaining particles from the previous processes may cantaminate your Ni film). This might be the reason why you couldn't get rid of those dust particles by nitrogen gun or aceton etc.
Kind Regards,
Said
We usually clean our wafers 10 minutes in 99% HNO3, rinse in DI, then 10 minutes in 69% HNO3 at 95 deg. C and rinse again in DI, before sputtering. This procedure removes most organic and metal contaminations. Of course this would dissolve/damage your nickel film if it would already be present so you can only do it before sputtering. Before graphene growth I would ultrasonicate in acetone and rinse with very pure isopropanol (but I have no experience with growing graphene).
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