I have used a target of Zn0.85Mg0.15O to produce a thin film of ZnMgO on Si substrate followed by phosphorus implantation by plasma immersion ion implantation and annealing at 700, 800, 900 and 10000 C. How could I measure/calculate the composition of ZnMgO thin film now? Is it possible that the composition of the material which is already fixed could be changed after this processing? If yes then how could I ensure it?
SIMS is the best way to measure the compostion of film. It will calculate the % composition of Zn, Mg, O and your implanted phosphorus in the film.
XPS or even EDX will give you a rougher answer. ICP AES would also do the trick, as you can chose an etchant that does not dissolve your wafer.
Dear Shantanu,
Don't worry. It is very simple and easy. As mentioned by Sir Neil, you can either use XPS or EDX. But one thing is important here. XPS only gives you information about a few nm down the surface. So for the surface composition, XPS might help you. But EDX would give you the detailed composition in your case. I hope I made myself clear.
Good luck!
AES (auger electron energy spectrometer) can be used to analyse the elements’distribution across the film/substrate regions.
Besides the compositional analysis which is always the best.
You can try to study the optical transmission and determine the absorption edge, and get an approx. idea of the band gap, and correlate the band gap variation with Mg composition from the published data. This will give you an approx. idea, if your composition is close to your expectations.
K. Sreenivas
Sreenivas Sir, Thank you very much. I think this is the easiest way to determine the composition.
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