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Questions related from Shantanu Saha
For instance, both nitride NW-QDs and h-BN point defect based SPEs seem to exhibit photon entanglement. Which platform will provide stronger entanglement? I suspect, that purity of the single...
01 January 2020 8,543 2 View
I have grown h-BN on HOPG by MBE and now I need to remove the substrate. Please let me know which process I should follow.
09 September 2019 6,204 3 View
Phosphorus was implanted via plasma immersion in implantation technique.
06 June 2016 8,623 3 View
Fp (xn) = EFn –kT ln (pn (xn)/ pno). where EFn is the equilibrium Fermi level of the n-side of the junction.
02 February 2016 9,840 0 View
Si and SiGe . Kindly provide your answer with required formulas.
02 February 2015 2,463 1 View
I have got references claiming acceptor peak at 3.33 eV [J.C. Fan, C.Y. Zhu, B. Yang, S. Fung, C.D. Beling, G. Brauer, W. Anwand, D. Grambole, K.S. Wong, Y.C. Zhong, Z. Xie, C.C. Ling, J. Vac....
12 December 2014 6,603 1 View
Why the mobility of electron is higher than that of hole? Though I was told that the effective mass of hole is higher than electron but Robert.F.Pierret clearly mentioned in his book that the...
11 November 2014 2,609 12 View
If yes then how?
08 August 2014 1,166 3 View
I have used a target of Zn0.85Mg0.15O to produce a thin film of ZnMgO on Si substrate followed by phosphorus implantation by plasma immersion ion implantation and annealing at 700, 800, 900 and...
08 August 2014 3,153 6 View
Acceptor-Bound-exciton peak of ZnO/ZnMgO.
08 August 2014 386 1 View