My group and I deal with the intercalate compounds of transition metal dichalcogenides of the titanium subgroup. Among them are semiconductors, such as TiS2, ZrSe2, and others. Intercalation of metals allows changing the concentration of charge carriers. Recently, we performed work on the intercalation of copper in ZrSe2 and found that intercalation leads to the formation of an impurity zone within the Zr4d / Ce4p gap. Upon reaching the composition of Co0,3ZpCe2, the material becomes a metal. For titanium disulfide, it is known that the introduction of silver leads to donor doping.

However, I do not understand the formulation of the problem. Do you want to do doping in situ? Or do you want to compare semiconductors with different levels of doping?

Alexander: Your paper is very interesting, but please address one of the essential criteria for my application--It must be possible to image the semiconductor in air. MoS2, as a 2-D semiconductor, may be "cleaved" with scotch tape as is done with HOPG, which is very convenient. The cleaved surface of MoS2 is stable enough in air that it may be imaged with atomic resolution. Do you believe that the materials you are working with would be usable for STM in air, and please tell me if they are 2-D semiconductors.

Dichalcogenides are really not very stable in air. But there is an alternative.

We grow TiS3 single crystals. This is a quasi-layered material exhibiting anisotropy within the plane. The anisotropy of resistances at a temperature of 77 K in the main crystallographic directions is R (b):R (a): R: (c) = 1: 100: 10000. Crystals easily exfoliate and are air resistant. The gap widths were measured within the plane at room temperature: in the direction of b is 0.95 + -0.05 eV, in the direction а is 1.24 + -0.05 eV.