I am analyzing some transient absorption data for hydrogenated amorphous silicon. Its seems that the banggap is around 1.7 eV i.e. 730nm. The pump is at 350nm and the probe from 500-900nm. I have gone through number of literature, but havenot seen ground bleach signal. The data that I have also show no ground bleach, as per my understanding, there would be ground bleach around the band gap.

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