Dear All,

I have a suggestion and open query to all the electrochemistry researchers regarding a major flaw associated with Mott-Schottky analysis and presenting wrong data in numerous prestigious journals such as electrochimica acta, ACS applied materials interfaces, JPCC etc. 

Indeed M-S is a great technique to obtain the electrical properties of electrodeposited films. Although Hall mobility measurement is more reliable, it can not be done for electrodeposited films due to the underneath conducting substrate. A M-S analysis under proper precautionary measures provides very reliable data. However, the wrong experimental approach has been found very common nowadays. It seems many reviewers and editors are also not concerned about publishing wrong results. 

A few critical steps are often missing:

1. Unless finding the space charge region, how the experiment can be done. As this experiment is completely surface sensitive, choosing a wrong potential window will convert the surface material to other phase resulting in wrong data. Many of the articles are not showing this critical step. It is better to mention the potential range vs RHE. The flat band thus be mentioned against RHE. 

2. A proper redox couple is mandatory to obtain reliable data. 

3. The slope (1/C^2 vs E) should cover at least 200 mV for confirming the type of material. The data point also should be at least 6-8 per 100 mV range. Many of the articles presented the data in a flimsy manner.

4. Showing the data only in a single frequency is not probably correct. Presenting the plot at least at 3-4 different frequencies should not differ in their flat band potential.

5. Many articles have mentioned astonishingly carrier concentration in the range of 10^19 - 10^26 cm^-3 for semiconductors. Also, many think higher carrier concentration will lead to better device performance. All sorts of wrong correlations have been observed in many articles. In a few cases, the carrier concentration has no match with the capacitance. Some have mentioned that they got higher carrier concentration (which is better they think) due to the less defective material (claimed phase pure, hence higher carrier concentration, which leads to better device performance).

The usefulness of M-S analysis is promising in photoelectrochemistry or photovoltaics to show a proper band alignment for efficient charge transfer in a heterostructure.

Where do the wrong interpretation of data and publishing in journals leading to?

More Chandan Das's questions See All
Similar questions and discussions