What will be the direction of electrons/holes in the conduction/valance band of HIT or Carrier Selective Contact (MoOx and NiOx) based Si solar cell for diffusion-limited/thermionic charge transport at high forward bias voltage in dark?
the charge transfer depend on many parameters
1-potential
2-driving force
3-activation energy
4-structure materials
5-coupling strength
you can see
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Dear Sapna Mudgal
Hope you are well!
Please display a drawing of the construction of your solar cell and polarity of the applied voltage.
Any solar cell as a diode has an anode and a cathode. In dark forward biasing the holes are transported in the direction from the anode to the cathode and the electrons are transported from the cathode to the anode.
Under short circuit and illuminated solar cell the holes will be directed to the anode and the electrons will be moved to the cathode as a consequence of the internal built in electric field which is always directed from cathode to anode.
Always compare your structure with the pn junction solar cell.
When you display your structure, I will give indicate the directions of the flow of electrons and holes.
I would like that you refer to the book chapter:Chapter Solar Cells and Arrays
Best wishes
Holes transfer from p side to n side. Electrons transfer from n side to p side. That is current is flowing from p to n.
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