I am trying to do some opto-electronic simulations (I-V, C-V, Bandwidth etc.) of a nano-wire(preferably III-V/ II-VI) based MSM photo-detector using Sentaurus TCAD (Synopsys). I could't find much tutorials or materials on electrical simulation of nano wire based PDs. Along with the general elaboration of opto-electronic simulation, I need some suggestions :
1. For the optical generation part, will the inclusion of 'constant generation model' give adequate accuracy in the I-V plot or is it necessary to use other types like 'ComputeFromMonochromaticSource', 'ComputeFromSpectrum' etc.
2. If the nano-wire dimension is not very small (say R > 20 nm and L>= 300 nm ) then is it necessary to use to the Sentaurus Device QTX Solver to get the I-V or just inclusion of Quantum correction models (eQuantumPotential ) will give adequate accuracy ?
3. I am also thinking of using 'Nonlocal Tunneling Model' for the junctions and interfaces along with the above mentioned models .
Are there any requirements for inclusions of any other modes( Hydrodynamic model, model to incorporate effects of traps and Fixed Charges etc.) ? If yes, then it would be much help if anyone could kindly suggest.
Antardipan Pal you can check this book, it contains two chapters on optoelectronic devices with code exemples (chapter 9: CMOS image sensor, chapter 10: hybrid silicon LASER).
3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics, by Simon Li and Yue Fu, 2011.
Also, by the same authors "3D TCAD Simulation for CMOS Nanoeletronic
Devices", 2017. this version contains anexemple of a gate-all around nano-wire FET with Lg=10nm (chapter 5), also with code exmples.
Thanks you so much Ali Houadef and Muhammad Hamza El-Saba
for your valuable suggestion. I'll surely check them out and get back to you if I have further issues. I really appreciate your time.- Badges
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