Could anybody point good references about the Threshold Voltage variation explanation after radiation, considering the Total Ionizing Dose,TID ?
From some references I know that VTH reduces because of the creation of positive charges in the gate oxide (SiO2) or increases because charges in the Si/SiO2 interface.
"H. Barnaby, “Total-Ionizing-Dose effects in modern CMOS technologies,” IEEE Trans. Nucl. Sci., vol. 53, no. 6, pp. 3103- 3120, 2006"
Dear Rafael,
The explanation for the variation of Vth is based on the interpretation of the physical mechanisms occurring radiation interaction with matter. About basic mechanisms in CMOS, there are numerous references. One of the main references is Oldham, and textbooks.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 50, NO. 3, JUNE 2003 483
Total Ionizing Dose Effects in MOS Oxides and Devices; T. R. Oldham, Fellow, IEEE, and F. B. McLean, Fellow, IEEE.
Presented at the 4th International Workshop on Radiation Effects on Semiconductor Devices for Space Application, Tsukuba, Japan, October 11-13, 2000 Radiation Damage of Electronic and Optoelectronic Devices in Space†; A. H. Johnston
The Impact of Substrate Bias on Proton Damage in 130 nm CMOS Technology Becca (0-7803-9367-8/05/$20.00 ©2005 IEEE.).
BOOK: Handbook of Radiation Effecs. SEcond edition, Andrew Holmes-Siedle & len Adams.
Book: Radiation effects and soft errors in integrated circuits and electronic devices; R. D. Schrimpf
Journal of Radioanalytical and Nuclear Chemistry, Vol. 239, No. 2 (1999) 357-360
Nathan Nowlin et al., International ournal of High Speed Electronics and Systems. Vol.14, n 2 (2004) pg. 367.
Dear Raphael,
There are numerous references out there and i think just saying modern CMOS is not specific enough because CMOS technology is also based on different design architectures which come with their own intrinsic device effects however please check on these references below.
Thanks
CMOS Design near the limit of scaling. IBM J. Res& Devices, 46 (2/3): 213-222, March/May 2002.
Ionizing Radiation Effects in MOS Devices and Circuits, By T. P. Ma, Paul V. Dressendorfer.
Microelectronics Technology and Devices - SBMicro 2008, Issue 1, edited by Jacobus W. Swart
Analog IC Reliability in Nanometer CMOS, By Elie Maricau, Georges Gielen
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