I would like to study the photo-induced structural change in amorphous thin chalcogenide films (Cux[As2(S0.5Se0.5)3]100-x). Just, if anyone could explain on which parameter of the material depends the laser wavelength which is to be used.
Generally, many of photoinduced effects are connected with bond rearrangement through excitation of non-bonding electrons, i.e. lonepairs. The most effective is application of light with photon energy equal or slightly higher than band gap energy. Higher energies is also applicable, lower energies under common circumstances not. Type of photoinduced effect (i.e. photodarkening or photobleaching) is given by particular bond energies involved in rearrangement.