I am planning to do CMP with an oxide wafer such as silicon. The reason for doing CMP is to improve the roughness of the oxide series and obtain an ultra-smooth wafer. The experiment will be conducted by controlling the concentration of hydrogen peroxide in the alumina slurry. At this time, I would like to know what effect hydrogen peroxide has on the wafer or slurry. Also, if it does have an impact, I would like to know what principle it has.