Depends on the materials of the semicon device. If it is a standard silicon/silicon oxide device the main thing you have to worry about is the metal interconnects and electrodes. Many acids and bases will etch ITO but will also etch aluminum which is a commonly used metal. I would try using an oxalic acid aqueous solution which is a reducing solution (again this depends on what metals are on the device). I found an old world patent application WO 2000011107 A1 which suggests just that. Other selective etches are also mentioned.
The following paper may be helpful: Tzu-Hsuan Tsai, Yung-Fu Wu, "Wet etching mechanisms of ITO films in oxalic acid", Microelectronic Engineering, 83(3) 2006, pp. 536-541.