I found these two papers. Hope this helps.

Article Ab initio study of metal gate electrode work function

Article Work function measurement of multilayer electrodes using Kel...

Yes. The effective work function depends on difference between Fermi level of metals and the interface. The crystallographic change / structural change at the interface plays an important role in the change in work function. However, they are usually in small range, and it becomes potential interest, by tuning the work function by suitable semiconductor or insulator in gate related applications.

work function changes in multiple situations. For example, if the electrode is connected to alternating current and the light to the electrode shines, the work function will also fluctuate and or if the electrode is connected to a heating system, the light in it, work function will have a variable. But the use of multi-electrodes shows the combination of several work functions.

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Peres, L., A. Bou, C. Cornille, Damien Barakel, and P. Torchio. "Work function measurement of multilayer electrodes using Kelvin probe force microscopy." Journal of Physics D: Applied Physics 50, no. 13 (2017): 13LT01.

Dear Shalu Pathak,

Yes, work function (WF) changes in the multilayer electrode.

WF is one of the main factors for the performance and the stability of organic light-emitting diodes (OLEDs), organic field-effective transistors (OFETs), and organic photovoltaic cells (OPVs) as both anode and cathode. WF is important for the contact between the semiconductor and electrodes, it needs special attention. It is dependent on both the properties of the active materials (semiconductors) and on the interfacial properties (contact resistance) of the semiconductor/electrodes.

Best Regards