Dear All,
We have synthesized a thin film on FTO with thickness 300 nm. To make the upper electrode we deposited gold using sputtering technique. But, when we are trying to perform dielectric measurements, there was short between the upper and the lower electrode. So, we are not able to perform dielectric measurements. Further, we tried avoiding this problem by increasing the thickness of the material sandwiched between two electrodes, still there was short between the two electrodes. I would be very grateful to you all if you could suggest me some technique or some papers regarding dielectric measurements for thin film materials with thickness less than 500 nm.
Thanks in advance