If silicon is coated on hole conducting material, to stop the flow of holes in one of direction, can we use Si as hole scavenger material?
Dear Maurya,
welcome,
The ideal scavenger of holes is an ohmic contact. Ohmic contact can be achieved by heavily doped p-type material contacted by aluminum metal.It can also achieved by very damaged silicon surface acting as a high recombination surface.
Best wishes
Hi,
It depends on the device architecture (p-i-n or n-i-p) and band alignment of solar cell device. If in case you use heavily doped p-Si, so first you are compromising with the transparency. Second it has to have a suitable band alignment with your hole transporting layer (HTL). Third it should have a sharp interface with HTL so that it can fully extract the photo generated positive charge carriers to have good Fill Factor, Voc and Jsc.
- Badges
- Science topic