Recently I am looking for a replacement of PMMA since this e beam lithography resist has a poor dry etch resistance. Though the company suggest using Amyl acetate, I intend to use IPA:Water instead which I use it to develop PMMA. Thus, we don't need to purchase additional chemicals. Can anyone share their experience developing this EBL resist?
Dear Wang-Chien Chen thank you for asking this interesting technical question. Please have a look at the following potentially useful article which might help you in your analysis:
CSAR 62 as negative-tone resist for high-contrast e-beam lithography at
temperatures between 4 K and room temperature
https://depositonce.tu-berlin.de/bitstream/11303/12426/2/Kaganskij_etal_CSAR_2016.pdf
(see attached pdf file)
Good luck with your research work! 👍
Dear Frank,
Thanks for your kind help!
I have seen this paper before, however this paper mentioned a 77% clearance under development of 20s. I guess I will have to give the IPA:Water a try.🤔
Again thanks for you information!
Best,
Wang Chien
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