I am working on SiO2 material synthesized by Plasma Enhanced CVD. I would like to know that how to measure substrate temperature of film during its growth. Is there any simulation which can gives the idea about substrate temperature?
Dear,
You can use an infrared thermometer which has beam focusing technique with screen.
https://www.ametek-land.com/products/non-contact-infrared-thermometers-pyrometers/spot-thermometer
regards
Abul
Radiation pyrometry can be used which measures the brightness or intensity of light in a narrow range of wavelengths being emitted by the target. The intensity of radiation is related to temperature by the Stefan-Boltzmann radiation law:
W= εσT4 where ε is the emissivity, σ is the Stefan-Boltzmann constant and T is the absolute temperature. If the emissivity is known, the temperature of the emitting body can be determined. The principle of temperature measurement by brightness comparison is used in optical pyrometer. A colour variation with the growth in temperature is taken as an index of temperature.
You can either use the Disappearing Filament (operates at a 0.65 micron wavelength) or Electronic Pyrometers (operate at 0.8 micron range).
This data can further be analyzed by open source softwares available in the web like sensortherm which can display measured temperatures numerically and graphically and many other functions.
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