Dear Tarun,
In order to define the fabrication steps and suitable processes you have to give a possible construction of your devices. Is it a thin film transistor?
In principle, the physical vapor deposition using electron beam can be used to deposit many materials with the required thickness. So, you can produce many layer stacks of different materials. It remains how would you shape the lateral geometry of these layers. it may shaped by photo lithography or electron beam lithography.
Best wishes
Thank you Sir, for your valuable suggestion,
I want to fabricate n-channel Gate - All - Around MOSFET strucure.
Sincerely waiting for your reply..
Dear Turan,
I did not take care for your last question. I think you may be through with your work. You need the raised channel structure. So, you can deposit the substrate material and pattern it with the lithography such that you free the sides of the channels. This may be the most feasible procedure.
It may be beneficial for the researchers on the research gate to hear from you how did you produced you Fin FET.
Best wishes
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