Siddharth,

The strained silicon is a compound semiconductor composed of Silicon an Germanium with majority native atoms are silicon. So, it inherits an intermediate properties of the two materials such as lower band gap than silicon, and higher hole mobility than that of silicon. This is because the material has a lighter effective mass of holes besides lower scattering rate. The lower bandgap is advantageous for the base of bipolar transistors. The high mobility is advantageous for the advanced mos Transistors. For more information please follow the link:http://www.sinano.eu/data/document/1-leadley_mobility_enhancement_in_sige_channels.ppt.ppt

Best wishes

Thanks a lot Abdelhalim Zekry sir.

Thank you Martin Stutzmann sir. Sir can you please provide me reference for Brillouin Zone?

Sir I have an introductory knowledge of electronic band structure in k space and Brillouin zone. I have followed the book "Solid State Electronic Devices" by Ben G. Streetman.

I would like some reference about Brillouin zone and electronic band structure.