I need to deposit Titanium dioxide (TiO2) on a glass substrate using sputtering, any suggestions for a recipe that can get a uniform coating please
Dear M. Abdelghani, would you please check the following documents. My Regards
https://doi.org/10.1016/S0040-6090(01)01054-9
Usually, simply take a Ti-metal target in a conventional sputter coater. If you do not have an Ar-O2 mixture at hand for reactive sputtering, introduce an additional leak valve in the gas supply system in addition to the Ar-gas supply. This way, you may manually control the composition of the sputter gas. The sputter rate in pure air will be small, but you may also try to sputter in air or pure O2-gas. Doing so, be careful, depending on the used vacuum pumps, pure O2 may result in explosive or at least inflammable exhaust gases ... You should in that gas add an additional gas load to the pump ...
If you sputter deposit in this way, usually amorphous TiO2 films will result (see e.g. Review of Scientific Instruments 76, 073905 (2005); DOI: 10.1063/1.1942529
. By adding heat, those film may crystallize to anatase or rutile TiO2. Hope this helps, Dirk
Dear M. Abdelghani, would you please check the following documents. My Regards
https://doi.org/10.1016/S0040-6090(01)01054-9
dear M. Abdelghani;
The titanium dioxide can be deposited on the substrates is grown by sputtering of a titanium target negatively polarized at 3-5 kV DC situated 14 mm in front of such substrates. you can use a plasma simple Pyrex-like glass cylindrical reactor of 50 cm long and 20 cm in diameter. as detailed the following reference;
Article TiO 2 thin and thick films grown on Si/glass by sputtering o...
Hi ;
Sputtering is based on the fabrication of a plasma from the ionization of an inert plasma gas, the most commonly used being argon. Usually the deposition is carried out in a vacuum chamber (10-6 Torr). This plasma is located around the target of the material to be deposited (the cathode). The heavy ions bombard the target material and tear off the surface atoms of this material. These atoms are directed towards the substrate. On the surface of this substrate they condense and cover it.
Deposition power: 150-200 Watt.
Pressure in the chamber: 5 10-5 Pa.
Deposition time: 1-4 hours.
Substrate rotation: 15-20 rpm.
Reactive gas: 50-60 sccm.
Substrate temperature: (100 °C, 200,….).
Deposition pressure: 0.6 Pa.
Argon flux corresponding to the deposition pressure: 5-10 sccm.
In order to remove impurities in the vacuum, the sputtering chamber must be pre-sputtered at a base pressure of ≈10-3Torr for 45-60 min. Also, the Ti target and the substrates must be obligatorily cleaned to remove surface and substrate contamination from your samples.
With my best regards
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