Can anyone give any comparative study between O2 pressure in PLD and total (O2 and Ar) chamber pressure in rf sputtering i.e. any equivalent pressure?

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Krishna Rudrapal

Sorry Dibakar, the links are not oppening from my side. can you please sent some alternative link or pdf?

thank you

K. Sreenivas

Sputtering is normally done at very low chamber pressures

5 millTorr to 40 mTorr,

whereas PLD for oxide film deposition is done at relatively much higher pressures.

Hence it will be difficult to find really comparative studies, but there may be a few studies where must have tried to compare at similar pressures. A good literature survey should help you out.